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Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy

Chen Chen Orcid Logo, Saptarsi Ghosh Orcid Logo, Peter De Wolf Orcid Logo, Zhida Liang Orcid Logo, Francesca Adams Orcid Logo, Menno J. Kappers Orcid Logo, David J. Wallis Orcid Logo, Rachel A. Oliver Orcid Logo

Applied Physics Letters, Volume: 124, Issue: 23

Swansea University Author: Saptarsi Ghosh Orcid Logo

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DOI (Published version): 10.1063/5.0203646

Abstract

Hyperspectral scanning capacitance microscopy (SCM) measures spectra at every XY location of a semiconductor sample surface area. We report its application to GaN-based high electron mobility transistor (HEMT) structures to map threshold voltage (Vth) at the nanoscale. The consistency between the co...

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Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: AIP Publishing 2024
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URI: https://cronfa.swan.ac.uk/Record/cronfa66864
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The consistency between the conventional SCM data and the hyperspectral SCM data set of the same area on the HEMT surface provides evidence for the reliability of hyperspectral SCM. We developed a method to extract a map of Vth distribution across the surface of the HEMT structure at the nanoscale from the hyperspectral SCM data set. The map reveals that most of the fissures (i.e., enlarged pits formed at threading dislocation surface endings) on the nitride sample surface reduce local Vth. Other variations in Vth in regions free of the fissures could be a result of thickness and/or composition inhomogeneities in the barrier layer. 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spelling 2024-07-08T12:27:49.0828130 v2 66864 2024-06-23 Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy 3e247ecabd6eddd319264d066b0ce959 0000-0003-1685-6228 Saptarsi Ghosh Saptarsi Ghosh true false 2024-06-23 ACEM Hyperspectral scanning capacitance microscopy (SCM) measures spectra at every XY location of a semiconductor sample surface area. We report its application to GaN-based high electron mobility transistor (HEMT) structures to map threshold voltage (Vth) at the nanoscale. The consistency between the conventional SCM data and the hyperspectral SCM data set of the same area on the HEMT surface provides evidence for the reliability of hyperspectral SCM. We developed a method to extract a map of Vth distribution across the surface of the HEMT structure at the nanoscale from the hyperspectral SCM data set. The map reveals that most of the fissures (i.e., enlarged pits formed at threading dislocation surface endings) on the nitride sample surface reduce local Vth. Other variations in Vth in regions free of the fissures could be a result of thickness and/or composition inhomogeneities in the barrier layer. Conventional SCM and other techniques cannot provide these detailed insights obtained through hyperspectral SCM. Journal Article Applied Physics Letters 124 23 AIP Publishing 0003-6951 1077-3118 7 6 2024 2024-06-07 10.1063/5.0203646 http://dx.doi.org/10.1063/5.0203646 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee C. Chen would like to thank the China Scholarship Council and the Cambridge Commonwealth, European & International Trust for a CSC Cambridge Scholarship. The authors would like to thank Dr. Gunnar Kusch for help in data analysis using HyperSpy. Materials studied here were grown using the EPSRC National Epitaxy Facility under EPSRC Grant No. EP/N017927/1. The measurements were performed using the Royce AFM Facility under Cambridge Royce facilities Grant No. EP/P024947/1 and Sir Henry Royce Institute recurrent Grant No. EP/R00661X/1. 2024-07-08T12:27:49.0828130 2024-06-23T19:46:58.8891727 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Chen Chen 0000-0001-9931-2650 1 Saptarsi Ghosh 0000-0003-1685-6228 2 Peter De Wolf 0009-0005-7178-6228 3 Zhida Liang 0000-0001-8265-7599 4 Francesca Adams 0009-0008-2033-2121 5 Menno J. Kappers 0000-0002-6566-0742 6 David J. Wallis 0000-0002-0475-7583 7 Rachel A. Oliver 0000-0003-0029-3993 8 66864__30842__41f794ffa8f94e88ab223da01833bbe5.pdf 66864.VoR.pdf 2024-07-08T12:25:50.2452153 Output 2231351 application/pdf Version of Record true Copyright 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. true eng https://creativecommons.org/licenses/by/4.0/
title Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy
spellingShingle Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy
Saptarsi Ghosh
title_short Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy
title_full Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy
title_fullStr Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy
title_full_unstemmed Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy
title_sort Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy
author_id_str_mv 3e247ecabd6eddd319264d066b0ce959
author_id_fullname_str_mv 3e247ecabd6eddd319264d066b0ce959_***_Saptarsi Ghosh
author Saptarsi Ghosh
author2 Chen Chen
Saptarsi Ghosh
Peter De Wolf
Zhida Liang
Francesca Adams
Menno J. Kappers
David J. Wallis
Rachel A. Oliver
format Journal article
container_title Applied Physics Letters
container_volume 124
container_issue 23
publishDate 2024
institution Swansea University
issn 0003-6951
1077-3118
doi_str_mv 10.1063/5.0203646
publisher AIP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
url http://dx.doi.org/10.1063/5.0203646
document_store_str 1
active_str 0
description Hyperspectral scanning capacitance microscopy (SCM) measures spectra at every XY location of a semiconductor sample surface area. We report its application to GaN-based high electron mobility transistor (HEMT) structures to map threshold voltage (Vth) at the nanoscale. The consistency between the conventional SCM data and the hyperspectral SCM data set of the same area on the HEMT surface provides evidence for the reliability of hyperspectral SCM. We developed a method to extract a map of Vth distribution across the surface of the HEMT structure at the nanoscale from the hyperspectral SCM data set. The map reveals that most of the fissures (i.e., enlarged pits formed at threading dislocation surface endings) on the nitride sample surface reduce local Vth. Other variations in Vth in regions free of the fissures could be a result of thickness and/or composition inhomogeneities in the barrier layer. Conventional SCM and other techniques cannot provide these detailed insights obtained through hyperspectral SCM.
published_date 2024-06-07T08:18:58Z
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score 11.048994

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