Journal article 15 views
Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide
Ultramicroscopy, Volume: 254, Start page: 113833
Swansea University Author:
Saptarsi Ghosh
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1016/j.ultramic.2023.113833
Abstract
Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide
Published in: | Ultramicroscopy |
---|---|
ISSN: | 0304-3991 |
Published: |
Elsevier BV
2023
|
Online Access: |
Check full text
|
URI: | https://cronfa.swan.ac.uk/Record/cronfa66866 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
College: |
Faculty of Science and Engineering |
---|---|
Start Page: |
113833 |