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Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide

Chen Chen Orcid Logo, Saptarsi Ghosh Orcid Logo, Francesca Adams, Menno J. Kappers, David J. Wallis, Rachel A. Oliver

Ultramicroscopy, Volume: 254, Start page: 113833

Swansea University Author: Saptarsi Ghosh Orcid Logo

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Published in: Ultramicroscopy
ISSN: 0304-3991
Published: Elsevier BV 2023
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URI: https://cronfa.swan.ac.uk/Record/cronfa66866
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last_indexed 2024-07-04T16:51:24Z
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spelling v2 66866 2024-06-23 Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide 3e247ecabd6eddd319264d066b0ce959 0000-0003-1685-6228 Saptarsi Ghosh Saptarsi Ghosh true false 2024-06-23 ACEM Journal Article Ultramicroscopy 254 113833 Elsevier BV 0304-3991 1 12 2023 2023-12-01 10.1016/j.ultramic.2023.113833 http://dx.doi.org/10.1016/j.ultramic.2023.113833 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2024-07-04T17:51:26.6638975 2024-06-23T19:49:29.9033510 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Chen Chen 0000-0001-9931-2650 1 Saptarsi Ghosh 0000-0003-1685-6228 2 Francesca Adams 3 Menno J. Kappers 4 David J. Wallis 5 Rachel A. Oliver 6
title Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide
spellingShingle Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide
Saptarsi Ghosh
title_short Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide
title_full Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide
title_fullStr Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide
title_full_unstemmed Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide
title_sort Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide
author_id_str_mv 3e247ecabd6eddd319264d066b0ce959
author_id_fullname_str_mv 3e247ecabd6eddd319264d066b0ce959_***_Saptarsi Ghosh
author Saptarsi Ghosh
author2 Chen Chen
Saptarsi Ghosh
Francesca Adams
Menno J. Kappers
David J. Wallis
Rachel A. Oliver
format Journal article
container_title Ultramicroscopy
container_volume 254
container_start_page 113833
publishDate 2023
institution Swansea University
issn 0304-3991
doi_str_mv 10.1016/j.ultramic.2023.113833
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
url http://dx.doi.org/10.1016/j.ultramic.2023.113833
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published_date 2023-12-01T17:51:24Z
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