E-Thesis 328 views 828 downloads
The study and evaluation of ohmic contacts on GaN based wide band gap semiconductors / GARETH DAVIES
Swansea University Author: GARETH DAVIES
Abstract
Wide band gap (WBG) semiconductors, particularly Gallium Nitride (GaN), have emerged as transformative materials in power electronics, surpassing the limitations of traditional silicon-based devices. This thesis presents a detailed investigation into the development and optimization of ohmic contact...
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Swansea University, Wales, UK
2025
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| Institution: | Swansea University |
| Degree level: | Master of Research |
| Degree name: | MSc by Research |
| Supervisor: | Jennings, M. |
| URI: | https://cronfa.swan.ac.uk/Record/cronfa68817 |
| Abstract: |
Wide band gap (WBG) semiconductors, particularly Gallium Nitride (GaN), have emerged as transformative materials in power electronics, surpassing the limitations of traditional silicon-based devices. This thesis presents a detailed investigation into the development and optimization of ohmic contacts for GaN-based High Electron Mobility Transistors (HEMTs), aiming to enhance performance, reliability, and efficiency.The study focuses on evaluating ohmic contacts using materials such as pure aluminium (Al), aluminium Silicon Copper (AlSiCu), Titanium (Ti), and Tantalum (Ta). Fabrication processes, including deposition and annealing at temperatures up to 600°C, were conducted to establish robust metal-semiconductor interfaces. Electrical characteristics were measured across varying temperatures (300K–400K), employing the Transmission Line Method (TLM) to extract specific contact resistivity (ρC) andanalyse transport mechanisms like Thermionic Emission (TE), Thermionic Field Emission (TFE), and Field Emission (FE) |
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| Item Description: |
A selection of content is redacted or is partially redacted from this thesis to protect sensitive and personal information. |
| Keywords: |
Gold-free, AlGaN, HEMT, Thermionic Field Emission, Specific Contact Resistance |
| College: |
Faculty of Science and Engineering |
| Funders: |
Vishay Newport Ltd |