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The study and evaluation of ohmic contacts on GaN based wide band gap semiconductors / GARETH DAVIES

Swansea University Author: GARETH DAVIES

Abstract

Wide band gap (WBG) semiconductors, particularly Gallium Nitride (GaN), have emerged as transformative materials in power electronics, surpassing the limitations of traditional silicon-based devices. This thesis presents a detailed investigation into the development and optimization of ohmic contact...

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Published: Swansea University, Wales, UK 2025
Institution: Swansea University
Degree level: Master of Research
Degree name: MSc by Research
Supervisor: Jennings, M.
URI: https://cronfa.swan.ac.uk/Record/cronfa68817
first_indexed 2025-02-06T15:01:17Z
last_indexed 2025-02-07T05:56:38Z
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recordtype RisThesis
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spelling 2025-02-06T15:01:15.8581496 v2 68817 2025-02-06 The study and evaluation of ohmic contacts on GaN based wide band gap semiconductors 00da87db377c1e449d578367505ef34b GARETH DAVIES GARETH DAVIES true false 2025-02-06 Wide band gap (WBG) semiconductors, particularly Gallium Nitride (GaN), have emerged as transformative materials in power electronics, surpassing the limitations of traditional silicon-based devices. This thesis presents a detailed investigation into the development and optimization of ohmic contacts for GaN-based High Electron Mobility Transistors (HEMTs), aiming to enhance performance, reliability, and efficiency.The study focuses on evaluating ohmic contacts using materials such as pure aluminium (Al), aluminium Silicon Copper (AlSiCu), Titanium (Ti), and Tantalum (Ta). Fabrication processes, including deposition and annealing at temperatures up to 600°C, were conducted to establish robust metal-semiconductor interfaces. Electrical characteristics were measured across varying temperatures (300K–400K), employing the Transmission Line Method (TLM) to extract specific contact resistivity (ρC) andanalyse transport mechanisms like Thermionic Emission (TE), Thermionic Field Emission (TFE), and Field Emission (FE) E-Thesis Swansea University, Wales, UK Gold-free, AlGaN, HEMT, Thermionic Field Emission, Specific Contact Resistance 8 1 2025 2025-01-08 A selection of content is redacted or is partially redacted from this thesis to protect sensitive and personal information. COLLEGE NANME COLLEGE CODE Swansea University Jennings, M. Master of Research MSc by Research Vishay Newport Ltd Vishay Newport Ltd 2025-02-06T15:01:15.8581496 2025-02-06T14:49:50.6588241 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering GARETH DAVIES 1 68817__33523__ef62c84fc8004054855f21d15feaf9c1.pdf 2025_Davies_G.final.68817.pdf 2025-02-06T15:00:32.1970330 Output 3174601 application/pdf E-Thesis – open access true Copyright: The Author, Gareth Davies, 2025 true eng
title The study and evaluation of ohmic contacts on GaN based wide band gap semiconductors
spellingShingle The study and evaluation of ohmic contacts on GaN based wide band gap semiconductors
GARETH DAVIES
title_short The study and evaluation of ohmic contacts on GaN based wide band gap semiconductors
title_full The study and evaluation of ohmic contacts on GaN based wide band gap semiconductors
title_fullStr The study and evaluation of ohmic contacts on GaN based wide band gap semiconductors
title_full_unstemmed The study and evaluation of ohmic contacts on GaN based wide band gap semiconductors
title_sort The study and evaluation of ohmic contacts on GaN based wide band gap semiconductors
author_id_str_mv 00da87db377c1e449d578367505ef34b
author_id_fullname_str_mv 00da87db377c1e449d578367505ef34b_***_GARETH DAVIES
author GARETH DAVIES
author2 GARETH DAVIES
format E-Thesis
publishDate 2025
institution Swansea University
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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description Wide band gap (WBG) semiconductors, particularly Gallium Nitride (GaN), have emerged as transformative materials in power electronics, surpassing the limitations of traditional silicon-based devices. This thesis presents a detailed investigation into the development and optimization of ohmic contacts for GaN-based High Electron Mobility Transistors (HEMTs), aiming to enhance performance, reliability, and efficiency.The study focuses on evaluating ohmic contacts using materials such as pure aluminium (Al), aluminium Silicon Copper (AlSiCu), Titanium (Ti), and Tantalum (Ta). Fabrication processes, including deposition and annealing at temperatures up to 600°C, were conducted to establish robust metal-semiconductor interfaces. Electrical characteristics were measured across varying temperatures (300K–400K), employing the Transmission Line Method (TLM) to extract specific contact resistivity (ρC) andanalyse transport mechanisms like Thermionic Emission (TE), Thermionic Field Emission (TFE), and Field Emission (FE)
published_date 2025-01-08T05:18:55Z
_version_ 1857710861240500224
score 11.096892

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