Effective Bandstructure Model for Monte Carlo Simulations of Electron and Hole Transport in Germanium

Islam, Aynul; Cai, Shuqiao; Alabdullah, Murad; Kalna, Karol

doi:10.1149/2162-8777/adedb7

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Effective Bandstructure Model for Monte Carlo Simulations of Electron and Hole Transport in Germanium

Aynul Islam

, Shuqiao Cai

, Murad Alabdullah

, Karol Kalna

ECS Journal of Solid State Science and Technology, Volume: 14, Issue: 7, Start page: 073007

Swansea University Author: Karol Kalna

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DOI (Published version): 10.1149/2162-8777/adedb7

Abstract

A simple yet highly effective band structure model of germanium (Ge) for electron and hole transport in bulk semiconductor is developed for Monte Carlo (MC) simulations at 300 K. The simulated electron and hole drift velocities versus the applied electric field are compared with experimental data, s...

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Published in:	ECS Journal of Solid State Science and Technology
ISSN:	2162-8769 2162-8777
Published:	The Electrochemical Society 2025
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa70036

first_indexed	2025-07-24T16:01:46Z
last_indexed	2025-07-26T01:59:38Z
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spelling	2025-07-24T17:07:51.1430204 v2 70036 2025-07-24 Effective Bandstructure Model for Monte Carlo Simulations of Electron and Hole Transport in Germanium 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2025-07-24 ACEM A simple yet highly effective band structure model of germanium (Ge) for electron and hole transport in bulk semiconductor is developed for Monte Carlo (MC) simulations at 300 K. The simulated electron and hole drift velocities versus the applied electric field are compared with experimental data, serving as a reference for model accuracy. The comparison between the experimental and simulation results, up to an electric field of 700 kV cm−1 for electrons and up to 10 kV cm−1 for holes in the Ge 〈100〉 crystallographic orientation, demonstrates exceptionally good agreement, especially for holes, when compared to previous works. We have found that electron/hole effective masses in the lowest valley (the L-valley)/band (the heavy-band) are highly anisotropic with longitudinal and transverse masses of 1.588/1.64 and 0.082/0.052, respectively. The electron and hole mobilities as a function of ionised impurity concentration are also obtained using a static screening model in carrier scattering with ionised impurities. Finally, the relaxation times and the occupation of valleys in the conduction and valence bands are shown as a function of the applied electric field. Journal Article ECS Journal of Solid State Science and Technology 14 7 073007 The Electrochemical Society 2162-8769 2162-8777 23 7 2025 2025-07-23 10.1149/2162-8777/adedb7 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee 2025-07-24T17:07:51.1430204 2025-07-24T17:01:32.0132070 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Aynul Islam 0000-0002-3825-1484 1 Shuqiao Cai 0009-0009-5520-8734 2 Murad Alabdullah 0000-0002-4941-2474 3 Karol Kalna 0000-0002-6333-9189 4 70036__34841__83962cc346f341dc8a13dea6a297e15a.pdf 70036.VoR.pdf 2025-07-24T17:05:39.3402461 Output 2365007 application/pdf Version of Record true © 2025 The Author(s). This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY). true eng https://creativecommons.org/licenses/by/4.0/
title	Effective Bandstructure Model for Monte Carlo Simulations of Electron and Hole Transport in Germanium
spellingShingle	Effective Bandstructure Model for Monte Carlo Simulations of Electron and Hole Transport in Germanium Karol Kalna
title_short	Effective Bandstructure Model for Monte Carlo Simulations of Electron and Hole Transport in Germanium
title_full	Effective Bandstructure Model for Monte Carlo Simulations of Electron and Hole Transport in Germanium
title_fullStr	Effective Bandstructure Model for Monte Carlo Simulations of Electron and Hole Transport in Germanium
title_full_unstemmed	Effective Bandstructure Model for Monte Carlo Simulations of Electron and Hole Transport in Germanium
title_sort	Effective Bandstructure Model for Monte Carlo Simulations of Electron and Hole Transport in Germanium
author_id_str_mv	1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv	1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author	Karol Kalna
author2	Aynul Islam Shuqiao Cai Murad Alabdullah Karol Kalna
format	Journal article
container_title	ECS Journal of Solid State Science and Technology
container_volume	14
container_issue	7
container_start_page	073007
publishDate	2025
institution	Swansea University
issn	2162-8769 2162-8777
doi_str_mv	10.1149/2162-8777/adedb7
publisher	The Electrochemical Society
college_str	Faculty of Science and Engineering
hierarchytype
hierarchy_top_id	facultyofscienceandengineering
hierarchy_top_title	Faculty of Science and Engineering
hierarchy_parent_id	facultyofscienceandengineering
hierarchy_parent_title	Faculty of Science and Engineering
department_str	School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str	1
active_str	0
description	A simple yet highly effective band structure model of germanium (Ge) for electron and hole transport in bulk semiconductor is developed for Monte Carlo (MC) simulations at 300 K. The simulated electron and hole drift velocities versus the applied electric field are compared with experimental data, serving as a reference for model accuracy. The comparison between the experimental and simulation results, up to an electric field of 700 kV cm−1 for electrons and up to 10 kV cm−1 for holes in the Ge 〈100〉 crystallographic orientation, demonstrates exceptionally good agreement, especially for holes, when compared to previous works. We have found that electron/hole effective masses in the lowest valley (the L-valley)/band (the heavy-band) are highly anisotropic with longitudinal and transverse masses of 1.588/1.64 and 0.082/0.052, respectively. The electron and hole mobilities as a function of ionised impurity concentration are also obtained using a static screening model in carrier scattering with ionised impurities. Finally, the relaxation times and the occupation of valleys in the conduction and valence bands are shown as a function of the applied electric field.
published_date	2025-07-23T05:26:18Z
_version_	1851550731382816768
score	11.089572

Effective Bandstructure Model for Monte Carlo Simulations of Electron and Hole Transport in Germanium

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