Journal article 1154 views
A detailed 3D-NEGF simulation study of tunnelling in n-Si nanowire MOSFETs
Antonio Martinez Muniz,
Antonio Martinez Muniz 
Swansea University Author:
Antonio Martinez Muniz
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DOI (Published version): 10.1109/snw.2010.5562591
Abstract
A detailed 3D-NEGF simulation study of tunnelling in n-Si nanowire MOSFETs
| Published: |
2010
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa10572 |
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| College: |
Faculty of Science and Engineering |
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