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Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors
Antonio Martinez,
Manuel Aldegunde,
Natalia Seoane,
Andrew R Brown,
John R Barker,
Asen Asenov,
Antonio Martinez Muniz
IEEE Transactions on Electron Devices, Volume: 58, Issue: 8, Pages: 2209 - 2217
Swansea University Author:
Antonio Martinez Muniz
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DOI (Published version): 10.1109/ted.2011.2157929
Abstract
Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors
Published in: | IEEE Transactions on Electron Devices |
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ISSN: | 0018-9383 1557-9646 |
Published: |
2011
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URI: | https://cronfa.swan.ac.uk/Record/cronfa10576 |
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<?xml version="1.0"?><rfc1807><datestamp>2016-08-17T13:50:16.7370754</datestamp><bib-version>v2</bib-version><id>10576</id><entry>2013-09-03</entry><title>Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors</title><swanseaauthors><author><sid>cd433784251add853672979313f838ec</sid><ORCID>0000-0001-8131-7242</ORCID><firstname>Antonio</firstname><surname>Martinez Muniz</surname><name>Antonio Martinez Muniz</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract/><type>Journal Article</type><journal>IEEE Transactions on Electron Devices</journal><volume>58</volume><journalNumber>8</journalNumber><paginationStart>2209</paginationStart><paginationEnd>2217</paginationEnd><publisher/><issnPrint>0018-9383</issnPrint><issnElectronic>1557-9646</issnElectronic><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2011</publishedYear><publishedDate>2011-12-31</publishedDate><doi>10.1109/ted.2011.2157929</doi><url/><notes>This paper was invited to appear in a special issue of IEEE Transactions on Electron Devices .The simulator developed in this work was used in the benchmarking of quantum transport simulators in the European NANOSIL project. Variability in device behavior due to random dopants and random realization of the Si/SiO2 interfaces are some of the critical problems affecting the miniaturization of CMOS devices. In this paper, the variability of extremely scaled nanowires has been evaluated for the first time, using a full quantum mechanical device simulator.</notes><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2016-08-17T13:50:16.7370754</lastEdited><Created>2013-09-03T06:39:01.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Antonio</firstname><surname>Martinez</surname><order>1</order></author><author><firstname>Manuel</firstname><surname>Aldegunde</surname><order>2</order></author><author><firstname>Natalia</firstname><surname>Seoane</surname><order>3</order></author><author><firstname>Andrew R</firstname><surname>Brown</surname><order>4</order></author><author><firstname>John R</firstname><surname>Barker</surname><order>5</order></author><author><firstname>Asen</firstname><surname>Asenov</surname><order>6</order></author><author><firstname>Antonio</firstname><surname>Martinez Muniz</surname><orcid>0000-0001-8131-7242</orcid><order>7</order></author></authors><documents/><OutputDurs/></rfc1807> |
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2016-08-17T13:50:16.7370754 v2 10576 2013-09-03 Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 EEEG Journal Article IEEE Transactions on Electron Devices 58 8 2209 2217 0018-9383 1557-9646 31 12 2011 2011-12-31 10.1109/ted.2011.2157929 This paper was invited to appear in a special issue of IEEE Transactions on Electron Devices .The simulator developed in this work was used in the benchmarking of quantum transport simulators in the European NANOSIL project. Variability in device behavior due to random dopants and random realization of the Si/SiO2 interfaces are some of the critical problems affecting the miniaturization of CMOS devices. In this paper, the variability of extremely scaled nanowires has been evaluated for the first time, using a full quantum mechanical device simulator. COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2016-08-17T13:50:16.7370754 2013-09-03T06:39:01.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Antonio Martinez 1 Manuel Aldegunde 2 Natalia Seoane 3 Andrew R Brown 4 John R Barker 5 Asen Asenov 6 Antonio Martinez Muniz 0000-0001-8131-7242 7 |
title |
Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors |
spellingShingle |
Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors Antonio Martinez Muniz |
title_short |
Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors |
title_full |
Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors |
title_fullStr |
Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors |
title_full_unstemmed |
Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors |
title_sort |
Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors |
author_id_str_mv |
cd433784251add853672979313f838ec |
author_id_fullname_str_mv |
cd433784251add853672979313f838ec_***_Antonio Martinez Muniz |
author |
Antonio Martinez Muniz |
author2 |
Antonio Martinez Manuel Aldegunde Natalia Seoane Andrew R Brown John R Barker Asen Asenov Antonio Martinez Muniz |
format |
Journal article |
container_title |
IEEE Transactions on Electron Devices |
container_volume |
58 |
container_issue |
8 |
container_start_page |
2209 |
publishDate |
2011 |
institution |
Swansea University |
issn |
0018-9383 1557-9646 |
doi_str_mv |
10.1109/ted.2011.2157929 |
college_str |
Faculty of Science and Engineering |
hierarchytype |
|
hierarchy_top_id |
facultyofscienceandengineering |
hierarchy_top_title |
Faculty of Science and Engineering |
hierarchy_parent_id |
facultyofscienceandengineering |
hierarchy_parent_title |
Faculty of Science and Engineering |
department_str |
School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
document_store_str |
0 |
active_str |
0 |
published_date |
2011-12-31T03:11:59Z |
_version_ |
1763750046561468416 |
score |
11.021648 |