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NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants

A Martinez, M Aldegunde, A.R Brown, S Roy, A Asenov, Antonio Martinez Muniz Orcid Logo

Solid-State Electronics, Volume: 71, Pages: 101 - 105

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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Published in: Solid-State Electronics
ISSN: 0038-1101
Published: 2012
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa10579
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Item Description: This paper first appeared at the ULIS (Ireland) conference and was subsequently invited for publication in Solid state electronics journal, as it showed that extremely scaled junctionless transistors with channel lengths smaller than 20 nm and 5x5 nm2 cross section have large variability due to random dopant fluctuations. These junctionless devices appear as an attractive alternative to conventional junction MOSFET transistors in future device miniaturisation.
College: College of Engineering
Start Page: 101
End Page: 105