Conference Paper/Proceeding/Abstract 1527 views
Monte Carlo simulations of inverse channel versus implant free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
Pages: 1 - 4
Swansea University Author:
Karol Kalna
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1109/iwce.2012.6242838
Abstract
Monte Carlo simulations of inverse channel versus implant free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
| Published: |
2012
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa14749 |
| first_indexed |
2013-07-23T12:13:30Z |
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| last_indexed |
2018-02-09T04:46:20Z |
| id |
cronfa14749 |
| recordtype |
SURis |
| fullrecord |
<?xml version="1.0"?><rfc1807><datestamp>2015-05-31T17:52:01.7694395</datestamp><bib-version>v2</bib-version><id>14749</id><entry>2013-09-03</entry><title>Monte Carlo simulations of inverse channel versus implant free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs</title><swanseaauthors><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>ACEM</deptcode><abstract></abstract><type>Conference Paper/Proceeding/Abstract</type><journal/><paginationStart>1</paginationStart><paginationEnd>4</paginationEnd><publisher/><issnPrint/><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2012</publishedYear><publishedDate>2012-12-31</publishedDate><doi>10.1109/iwce.2012.6242838</doi><url/><notes></notes><college>COLLEGE NANME</college><department>Aerospace, Civil, Electrical, and Mechanical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>ACEM</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2015-05-31T17:52:01.7694395</lastEdited><Created>2013-09-03T06:36:42.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>K</firstname><surname>Kalna</surname><order>1</order></author><author><firstname>J. S</firstname><surname>Ayubi-Moak</surname><order>2</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>3</order></author></authors><documents/><OutputDurs/></rfc1807> |
| spelling |
2015-05-31T17:52:01.7694395 v2 14749 2013-09-03 Monte Carlo simulations of inverse channel versus implant free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 ACEM Conference Paper/Proceeding/Abstract 1 4 31 12 2012 2012-12-31 10.1109/iwce.2012.6242838 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2015-05-31T17:52:01.7694395 2013-09-03T06:36:42.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering K Kalna 1 J. S Ayubi-Moak 2 Karol Kalna 0000-0002-6333-9189 3 |
| title |
Monte Carlo simulations of inverse channel versus implant free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs |
| spellingShingle |
Monte Carlo simulations of inverse channel versus implant free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs Karol Kalna |
| title_short |
Monte Carlo simulations of inverse channel versus implant free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs |
| title_full |
Monte Carlo simulations of inverse channel versus implant free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs |
| title_fullStr |
Monte Carlo simulations of inverse channel versus implant free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs |
| title_full_unstemmed |
Monte Carlo simulations of inverse channel versus implant free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs |
| title_sort |
Monte Carlo simulations of inverse channel versus implant free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs |
| author_id_str_mv |
1329a42020e44fdd13de2f20d5143253 |
| author_id_fullname_str_mv |
1329a42020e44fdd13de2f20d5143253_***_Karol Kalna |
| author |
Karol Kalna |
| author2 |
K Kalna J. S Ayubi-Moak Karol Kalna |
| format |
Conference Paper/Proceeding/Abstract |
| container_start_page |
1 |
| publishDate |
2012 |
| institution |
Swansea University |
| doi_str_mv |
10.1109/iwce.2012.6242838 |
| college_str |
Faculty of Science and Engineering |
| hierarchytype |
|
| hierarchy_top_id |
facultyofscienceandengineering |
| hierarchy_top_title |
Faculty of Science and Engineering |
| hierarchy_parent_id |
facultyofscienceandengineering |
| hierarchy_parent_title |
Faculty of Science and Engineering |
| department_str |
School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
| document_store_str |
0 |
| active_str |
0 |
| published_date |
2012-12-31T10:47:06Z |
| _version_ |
1850664945613537280 |
| score |
11.08899 |

