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Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism

A. Price, Antonio Martinez Muniz Orcid Logo

Journal of Applied Physics, Volume: 117, Issue: 16

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1063/1.4918301

Abstract

Using quantum transport simulations, the impact of electron-phonon scattering on the transfer characteristic of a gate-all-around nanowire (GaAs) field effect transistor (NWFET) has been thoroughly investigated. The Non-Equilibrium Green's Function formalism in the effective mass approximation...

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Published in: Journal of Applied Physics
ISSN: 0021-8979 1089-7550
Published: 2015
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URI: https://cronfa.swan.ac.uk/Record/cronfa22741
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first_indexed 2015-08-02T02:04:27Z
last_indexed 2020-10-06T02:36:17Z
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spelling 2020-10-05T14:27:41.3042210 v2 22741 2015-08-01 Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2015-08-01 EEEG Using quantum transport simulations, the impact of electron-phonon scattering on the transfer characteristic of a gate-all-around nanowire (GaAs) field effect transistor (NWFET) has been thoroughly investigated. The Non-Equilibrium Green's Function formalism in the effective mass approximation using a decoupled mode decomposition has been deployed. NWFETs of different dimensions have been considered, and scattering mechanisms including acoustic, optical and polar optical phonons have been included. The effective masses were extracted from tight binding simulations. High and low drain bias have been considered. We found substantial source to drain tunnelling current and significant impact of phonon scattering on the performance of the NWFET. At low drain bias, for a 2.2 × 2.2 nm2 cross-section transistor, scattering caused a 72%, 77%, and 81% decrease in the on-current for a 6 nm, 10 nm, and 20 nm channel length, respectively. This reduction in the current due to scattering is influenced by the increase in the tunnelling current. We include the percentage tunnelling for each valley at low and high drain bias. It was also found that the strong quantisation caused the relative position of the valleys to vary with the cross-section. This had a large effect on the overall tunnelling current. The phonon-limited mobility was also calculated, finding a mobility of 950 cm2/V s at an inversion charge density of 1012 cm−2 for a 4.2 × 4.2 nm2 cross-section device. Journal Article Journal of Applied Physics 117 16 0021-8979 1089-7550 FinFets Silicon devices. Quantum Transport, NEGF 28 4 2015 2015-04-28 10.1063/1.4918301 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-10-05T14:27:41.3042210 2015-08-01T13:03:36.5571742 College of Engineering Engineering A. Price 1 Antonio Martinez Muniz 0000-0001-8131-7242 2
title Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
spellingShingle Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
Antonio Martinez Muniz
title_short Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
title_full Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
title_fullStr Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
title_full_unstemmed Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
title_sort Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 A. Price
Antonio Martinez Muniz
format Journal article
container_title Journal of Applied Physics
container_volume 117
container_issue 16
publishDate 2015
institution Swansea University
issn 0021-8979
1089-7550
doi_str_mv 10.1063/1.4918301
college_str College of Engineering
hierarchytype
hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
document_store_str 0
active_str 0
description Using quantum transport simulations, the impact of electron-phonon scattering on the transfer characteristic of a gate-all-around nanowire (GaAs) field effect transistor (NWFET) has been thoroughly investigated. The Non-Equilibrium Green's Function formalism in the effective mass approximation using a decoupled mode decomposition has been deployed. NWFETs of different dimensions have been considered, and scattering mechanisms including acoustic, optical and polar optical phonons have been included. The effective masses were extracted from tight binding simulations. High and low drain bias have been considered. We found substantial source to drain tunnelling current and significant impact of phonon scattering on the performance of the NWFET. At low drain bias, for a 2.2 × 2.2 nm2 cross-section transistor, scattering caused a 72%, 77%, and 81% decrease in the on-current for a 6 nm, 10 nm, and 20 nm channel length, respectively. This reduction in the current due to scattering is influenced by the increase in the tunnelling current. We include the percentage tunnelling for each valley at low and high drain bias. It was also found that the strong quantisation caused the relative position of the valleys to vary with the cross-section. This had a large effect on the overall tunnelling current. The phonon-limited mobility was also calculated, finding a mobility of 950 cm2/V s at an inversion charge density of 1012 cm−2 for a 4.2 × 4.2 nm2 cross-section device.
published_date 2015-04-28T03:33:12Z
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score 10.898123