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Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors

Olga Kryvchenkova, Isam Abdullah, John Emyr Macdonald, Martin Elliott, Thomas D. Anthopoulos, Yen-Hung Lin, Petar Igić, Karol Kalna Orcid Logo, Richard Cobley Orcid Logo, Petar Igic Orcid Logo

ACS Applied Materials & Interfaces, Volume: 8, Issue: 38, Pages: 25631 - 25636

Swansea University Authors: Karol Kalna Orcid Logo, Richard Cobley Orcid Logo, Petar Igic Orcid Logo

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DOI (Published version): 10.1021/acsami.6b10332

Abstract

The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin pr...

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Published in: ACS Applied Materials & Interfaces
ISSN: 1944-8244 1944-8252
Published: 2016
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa29930
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Abstract: The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modeling is developed for the nondestructive detection of contact diffusion on active devices. Scans of the surface potential are modeled using physically based Technology Computer Aided Design (TCAD) simulations when the transistor terminals are grounded and under biased conditions. The simulations also incorporate the tip geometry to investigate its effect on the measurements due to electrostatic tip–sample interactions. The method is particularly useful for semiconductor– and metal–semiconductor interfaces where the potential contrast resulting from dopant diffusion is below that usually detectable with scanning probe microscopy.
Keywords: AFM, Kelvin probe, In2O3, solution processing, metal oxide transistors
Issue: 38
Start Page: 25631
End Page: 25636

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