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A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate / Petar, Igic

Applied Physics Letters, Volume: 100, Issue: 26, Start page: 263507

Swansea University Author: Petar, Igic

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DOI (Published version): 10.1063/1.4731630

Published in: Applied Physics Letters
ISSN: 0003-6951
Published: 2012
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Item Description: LD MagFET device, new generation of IC compatible magnetic sensors with increased sensitivity, suitable for Magnetic Sensitive Power IC technology, is designed, manufactured and tested; this is the latest result related to our work on Power IC Technology development (originally funded by £1M TSB grant). Device’s current-related relative magnetic sensitivity estimated as 30% 1/T is substantially, i.e., order of magnitude, higher than the one for the conventional split-drain silicon MagFETs reported so far.
College: College of Engineering
Issue: 26
Start Page: 263507