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A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate / Petar, Igic
Applied Physics Letters, Volume: 100, Issue: 26, Start page: 263507
Swansea University Author: Petar, Igic
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A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
|Published in:||Applied Physics Letters|
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LD MagFET device, new generation of IC compatible magnetic sensors with increased sensitivity, suitable for Magnetic Sensitive Power IC technology, is designed, manufactured and tested; this is the latest result related to our work on Power IC Technology development (originally funded by £1M TSB grant). Device’s current-related relative magnetic sensitivity estimated as 30% 1/T is substantially, i.e., order of magnitude, higher than the one for the conventional split-drain silicon MagFETs reported so far.
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