Journal article 978 views
A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
Applied Physics Letters, Volume: 100, Issue: 26, Start page: 263507
Swansea University Author: Petar Igic
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1063/1.4731630
Abstract
A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
Published in: | Applied Physics Letters |
---|---|
ISSN: | 0003-6951 |
Published: |
2012
|
Online Access: |
Check full text
|
URI: | https://cronfa.swan.ac.uk/Record/cronfa11868 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
first_indexed |
2013-07-23T12:07:02Z |
---|---|
last_indexed |
2018-02-09T04:41:44Z |
id |
cronfa11868 |
recordtype |
SURis |
fullrecord |
<?xml version="1.0"?><rfc1807><datestamp>2016-08-17T10:59:45.8601788</datestamp><bib-version>v2</bib-version><id>11868</id><entry>2013-09-03</entry><title>A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate</title><swanseaauthors><author><sid>e085acc259a367abc89338346a150186</sid><ORCID>0000-0001-8150-8815</ORCID><firstname>Petar</firstname><surname>Igic</surname><name>Petar Igic</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEN</deptcode><abstract></abstract><type>Journal Article</type><journal>Applied Physics Letters</journal><volume>100</volume><journalNumber>26</journalNumber><paginationStart>263507</paginationStart><publisher/><issnPrint>0003-6951</issnPrint><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2012</publishedYear><publishedDate>2012-12-31</publishedDate><doi>10.1063/1.4731630</doi><url/><notes>LD MagFET device, new generation of IC compatible magnetic sensors with increased sensitivity, suitable for Magnetic Sensitive Power IC technology, is designed, manufactured and tested; this is the latest result related to our work on Power IC Technology development (originally funded by £1M TSB grant). Device’s current-related relative magnetic sensitivity estimated as 30% 1/T is substantially, i.e., order of magnitude, higher than the one for the conventional split-drain silicon MagFETs reported so far.</notes><college>COLLEGE NANME</college><department>Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEN</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2016-08-17T10:59:45.8601788</lastEdited><Created>2013-09-03T06:16:17.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Engineering and Applied Sciences - Uncategorised</level></path><authors><author><firstname>N</firstname><surname>Janković</surname><order>1</order></author><author><firstname>D</firstname><surname>Pantić</surname><order>2</order></author><author><firstname>S</firstname><surname>Batcup</surname><order>3</order></author><author><firstname>P</firstname><surname>Igić</surname><order>4</order></author><author><firstname>Petar</firstname><surname>Igic</surname><orcid>0000-0001-8150-8815</orcid><order>5</order></author></authors><documents/><OutputDurs/></rfc1807> |
spelling |
2016-08-17T10:59:45.8601788 v2 11868 2013-09-03 A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate e085acc259a367abc89338346a150186 0000-0001-8150-8815 Petar Igic Petar Igic true false 2013-09-03 EEN Journal Article Applied Physics Letters 100 26 263507 0003-6951 31 12 2012 2012-12-31 10.1063/1.4731630 LD MagFET device, new generation of IC compatible magnetic sensors with increased sensitivity, suitable for Magnetic Sensitive Power IC technology, is designed, manufactured and tested; this is the latest result related to our work on Power IC Technology development (originally funded by £1M TSB grant). Device’s current-related relative magnetic sensitivity estimated as 30% 1/T is substantially, i.e., order of magnitude, higher than the one for the conventional split-drain silicon MagFETs reported so far. COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University 2016-08-17T10:59:45.8601788 2013-09-03T06:16:17.0000000 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised N Janković 1 D Pantić 2 S Batcup 3 P Igić 4 Petar Igic 0000-0001-8150-8815 5 |
title |
A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate |
spellingShingle |
A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate Petar Igic |
title_short |
A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate |
title_full |
A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate |
title_fullStr |
A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate |
title_full_unstemmed |
A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate |
title_sort |
A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate |
author_id_str_mv |
e085acc259a367abc89338346a150186 |
author_id_fullname_str_mv |
e085acc259a367abc89338346a150186_***_Petar Igic |
author |
Petar Igic |
author2 |
N Janković D Pantić S Batcup P Igić Petar Igic |
format |
Journal article |
container_title |
Applied Physics Letters |
container_volume |
100 |
container_issue |
26 |
container_start_page |
263507 |
publishDate |
2012 |
institution |
Swansea University |
issn |
0003-6951 |
doi_str_mv |
10.1063/1.4731630 |
college_str |
Faculty of Science and Engineering |
hierarchytype |
|
hierarchy_top_id |
facultyofscienceandengineering |
hierarchy_top_title |
Faculty of Science and Engineering |
hierarchy_parent_id |
facultyofscienceandengineering |
hierarchy_parent_title |
Faculty of Science and Engineering |
department_str |
School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised |
document_store_str |
0 |
active_str |
0 |
published_date |
2012-12-31T03:13:44Z |
_version_ |
1763750156258246656 |
score |
11.035349 |