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A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate / Petar, Igic

Applied Physics Letters, Volume: 100, Issue: 26, Start page: 263507

Swansea University Author: Petar, Igic

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DOI (Published version): 10.1063/1.4731630

Published in: Applied Physics Letters
ISSN: 0003-6951
Published: 2012
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URI: https://cronfa.swan.ac.uk/Record/cronfa11868
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2016-08-17T10:59:45.8601788</datestamp><bib-version>v2</bib-version><id>11868</id><entry>2013-09-03</entry><title>A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate</title><swanseaauthors><author><sid>e085acc259a367abc89338346a150186</sid><ORCID>0000-0001-8150-8815</ORCID><firstname>Petar</firstname><surname>Igic</surname><name>Petar Igic</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEN</deptcode><abstract></abstract><type>Journal Article</type><journal>Applied Physics Letters</journal><volume>100</volume><journalNumber>26</journalNumber><paginationStart>263507</paginationStart><publisher/><issnPrint>0003-6951</issnPrint><keywords/><publishedDay>1</publishedDay><publishedMonth>1</publishedMonth><publishedYear>2012</publishedYear><publishedDate>2012-01-01</publishedDate><doi>10.1063/1.4731630</doi><url/><notes>LD MagFET device, new generation of IC compatible magnetic sensors with increased sensitivity, suitable for Magnetic Sensitive Power IC technology, is designed, manufactured and tested; this is the latest result related to our work on Power IC Technology development (originally funded by &#xA3;1M TSB grant). Device&#x2019;s current-related relative magnetic sensitivity estimated as 30% 1/T is substantially, i.e., order of magnitude, higher than the one for the conventional split-drain silicon MagFETs reported so far.</notes><college>COLLEGE NANME</college><department>Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEN</DepartmentCode><institution>Swansea University</institution><lastEdited>2016-08-17T10:59:45.8601788</lastEdited><Created>2013-09-03T06:16:17.0000000</Created><path><level id="1">College of Engineering</level><level id="2">Engineering</level></path><authors><author><firstname>N</firstname><surname>Jankovi&#x107;</surname><order>1</order></author><author><firstname>D</firstname><surname>Panti&#x107;</surname><order>2</order></author><author><firstname>S</firstname><surname>Batcup</surname><order>3</order></author><author><firstname>P</firstname><surname>Igi&#x107;</surname><order>4</order></author><author><firstname>Petar</firstname><surname>Igic</surname><orcid>0000-0001-8150-8815</orcid><order>5</order></author></authors><documents/></rfc1807>
spelling 2016-08-17T10:59:45.8601788 v2 11868 2013-09-03 A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate e085acc259a367abc89338346a150186 0000-0001-8150-8815 Petar Igic Petar Igic true false 2013-09-03 EEN Journal Article Applied Physics Letters 100 26 263507 0003-6951 1 1 2012 2012-01-01 10.1063/1.4731630 LD MagFET device, new generation of IC compatible magnetic sensors with increased sensitivity, suitable for Magnetic Sensitive Power IC technology, is designed, manufactured and tested; this is the latest result related to our work on Power IC Technology development (originally funded by £1M TSB grant). Device’s current-related relative magnetic sensitivity estimated as 30% 1/T is substantially, i.e., order of magnitude, higher than the one for the conventional split-drain silicon MagFETs reported so far. COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University 2016-08-17T10:59:45.8601788 2013-09-03T06:16:17.0000000 College of Engineering Engineering N Janković 1 D Pantić 2 S Batcup 3 P Igić 4 Petar Igic 0000-0001-8150-8815 5
title A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
spellingShingle A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
Petar, Igic
title_short A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
title_full A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
title_fullStr A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
title_full_unstemmed A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
title_sort A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate
author_id_str_mv e085acc259a367abc89338346a150186
author_id_fullname_str_mv e085acc259a367abc89338346a150186_***_Petar, Igic
author Petar, Igic
format Journal article
container_title Applied Physics Letters
container_volume 100
container_issue 26
container_start_page 263507
publishDate 2012
institution Swansea University
issn 0003-6951
doi_str_mv 10.1063/1.4731630
college_str College of Engineering
hierarchytype
hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
document_store_str 0
active_str 0
published_date 2012-01-01T18:28:49Z
_version_ 1656635292222750720
score 10.879041