Journal article 940 views
Analysis of GaN MagHEMTs
Semiconductor Science and Technology, Volume: 33, Issue: 9, Start page: 095015
Swansea University Author: Petar Igic
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DOI (Published version): 10.1088/1361-6641/aad58f
Abstract
The simulations, calibration, measured output currents and relative sensitivity of the first-ever fabricated gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) are given in this work. The current imbalance and relative sensitivities obtained from simulations are calibrated...
Published in: | Semiconductor Science and Technology |
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ISSN: | 0268-1242 1361-6641 |
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2018
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URI: | https://cronfa.swan.ac.uk/Record/cronfa44552 |
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<?xml version="1.0"?><rfc1807><datestamp>2018-12-13T13:35:15.9915505</datestamp><bib-version>v2</bib-version><id>44552</id><entry>2018-09-24</entry><title>Analysis of GaN MagHEMTs</title><swanseaauthors><author><sid>e085acc259a367abc89338346a150186</sid><ORCID>0000-0001-8150-8815</ORCID><firstname>Petar</firstname><surname>Igic</surname><name>Petar Igic</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2018-09-24</date><deptcode>EEN</deptcode><abstract>The simulations, calibration, measured output currents and relative sensitivity of the first-ever fabricated gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) are given in this work. The current imbalance and relative sensitivities obtained from simulations are calibrated against the experimental data measured at room temperature (RT). The average calculated relative sensitivity of the 60 fabricated devices measured is 11.98%T−1. We present three-dimensional simulation results of GaN split-current magnetic sensors for different geometrical and biasing parameters at various ambient temperatures. The detailed analysis of device behaviour is given for each scenario. The relative sensitivity degrades at 400 K (S r = 6.78%T−1) and 500 K (S r = 4.91%T−1) compared to the sensitivity measured at 300 K (S r = 11.98%T−1). The GaN MagHEMTs show promising predicted relative sensitivities at 400 K and 500 K compared to silicon magnetic field effect transistors (MagFETs) operating at much lower temperatures. Moreover, device geometrical parameters are optimised to enhance the relative sensitivity from 11.98%T−1 to 23.29%T−1 using the commercial simulation toolbox Atlas, by Silvaco.</abstract><type>Journal Article</type><journal>Semiconductor Science and Technology</journal><volume>33</volume><journalNumber>9</journalNumber><paginationStart>095015</paginationStart><publisher/><issnPrint>0268-1242</issnPrint><issnElectronic>1361-6641</issnElectronic><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2018</publishedYear><publishedDate>2018-12-31</publishedDate><doi>10.1088/1361-6641/aad58f</doi><url/><notes/><college>COLLEGE NANME</college><department>Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEN</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2018-12-13T13:35:15.9915505</lastEdited><Created>2018-09-24T09:13:01.1506500</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Engineering and Applied Sciences - Uncategorised</level></path><authors><author><firstname>S</firstname><surname>Faramehr</surname><order>1</order></author><author><firstname>N</firstname><surname>Janković</surname><order>2</order></author><author><firstname>P</firstname><surname>Igić</surname><order>3</order></author><author><firstname>Petar</firstname><surname>Igic</surname><orcid>0000-0001-8150-8815</orcid><order>4</order></author></authors><documents/><OutputDurs/></rfc1807> |
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2018-12-13T13:35:15.9915505 v2 44552 2018-09-24 Analysis of GaN MagHEMTs e085acc259a367abc89338346a150186 0000-0001-8150-8815 Petar Igic Petar Igic true false 2018-09-24 EEN The simulations, calibration, measured output currents and relative sensitivity of the first-ever fabricated gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) are given in this work. The current imbalance and relative sensitivities obtained from simulations are calibrated against the experimental data measured at room temperature (RT). The average calculated relative sensitivity of the 60 fabricated devices measured is 11.98%T−1. We present three-dimensional simulation results of GaN split-current magnetic sensors for different geometrical and biasing parameters at various ambient temperatures. The detailed analysis of device behaviour is given for each scenario. The relative sensitivity degrades at 400 K (S r = 6.78%T−1) and 500 K (S r = 4.91%T−1) compared to the sensitivity measured at 300 K (S r = 11.98%T−1). The GaN MagHEMTs show promising predicted relative sensitivities at 400 K and 500 K compared to silicon magnetic field effect transistors (MagFETs) operating at much lower temperatures. Moreover, device geometrical parameters are optimised to enhance the relative sensitivity from 11.98%T−1 to 23.29%T−1 using the commercial simulation toolbox Atlas, by Silvaco. Journal Article Semiconductor Science and Technology 33 9 095015 0268-1242 1361-6641 31 12 2018 2018-12-31 10.1088/1361-6641/aad58f COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University 2018-12-13T13:35:15.9915505 2018-09-24T09:13:01.1506500 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised S Faramehr 1 N Janković 2 P Igić 3 Petar Igic 0000-0001-8150-8815 4 |
title |
Analysis of GaN MagHEMTs |
spellingShingle |
Analysis of GaN MagHEMTs Petar Igic |
title_short |
Analysis of GaN MagHEMTs |
title_full |
Analysis of GaN MagHEMTs |
title_fullStr |
Analysis of GaN MagHEMTs |
title_full_unstemmed |
Analysis of GaN MagHEMTs |
title_sort |
Analysis of GaN MagHEMTs |
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e085acc259a367abc89338346a150186 |
author_id_fullname_str_mv |
e085acc259a367abc89338346a150186_***_Petar Igic |
author |
Petar Igic |
author2 |
S Faramehr N Janković P Igić Petar Igic |
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Journal article |
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Semiconductor Science and Technology |
container_volume |
33 |
container_issue |
9 |
container_start_page |
095015 |
publishDate |
2018 |
institution |
Swansea University |
issn |
0268-1242 1361-6641 |
doi_str_mv |
10.1088/1361-6641/aad58f |
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Faculty of Science and Engineering |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
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School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised |
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description |
The simulations, calibration, measured output currents and relative sensitivity of the first-ever fabricated gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) are given in this work. The current imbalance and relative sensitivities obtained from simulations are calibrated against the experimental data measured at room temperature (RT). The average calculated relative sensitivity of the 60 fabricated devices measured is 11.98%T−1. We present three-dimensional simulation results of GaN split-current magnetic sensors for different geometrical and biasing parameters at various ambient temperatures. The detailed analysis of device behaviour is given for each scenario. The relative sensitivity degrades at 400 K (S r = 6.78%T−1) and 500 K (S r = 4.91%T−1) compared to the sensitivity measured at 300 K (S r = 11.98%T−1). The GaN MagHEMTs show promising predicted relative sensitivities at 400 K and 500 K compared to silicon magnetic field effect transistors (MagFETs) operating at much lower temperatures. Moreover, device geometrical parameters are optimised to enhance the relative sensitivity from 11.98%T−1 to 23.29%T−1 using the commercial simulation toolbox Atlas, by Silvaco. |
published_date |
2018-12-31T03:55:49Z |
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1763752803857072128 |
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11.035349 |