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Analysis of GaN MagHEMTs

S Faramehr, N Janković, P Igić, Petar Igic Orcid Logo

Semiconductor Science and Technology, Volume: 33, Issue: 9, Start page: 095015

Swansea University Author: Petar Igic Orcid Logo

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Abstract

The simulations, calibration, measured output currents and relative sensitivity of the first-ever fabricated gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) are given in this work. The current imbalance and relative sensitivities obtained from simulations are calibrated...

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Published in: Semiconductor Science and Technology
ISSN: 0268-1242 1361-6641
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa44552
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first_indexed 2018-09-24T12:58:45Z
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spelling 2018-12-13T13:35:15.9915505 v2 44552 2018-09-24 Analysis of GaN MagHEMTs e085acc259a367abc89338346a150186 0000-0001-8150-8815 Petar Igic Petar Igic true false 2018-09-24 EEN The simulations, calibration, measured output currents and relative sensitivity of the first-ever fabricated gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) are given in this work. The current imbalance and relative sensitivities obtained from simulations are calibrated against the experimental data measured at room temperature (RT). The average calculated relative sensitivity of the 60 fabricated devices measured is 11.98%T−1. We present three-dimensional simulation results of GaN split-current magnetic sensors for different geometrical and biasing parameters at various ambient temperatures. The detailed analysis of device behaviour is given for each scenario. The relative sensitivity degrades at 400 K (S r = 6.78%T−1) and 500 K (S r = 4.91%T−1) compared to the sensitivity measured at 300 K (S r = 11.98%T−1). The GaN MagHEMTs show promising predicted relative sensitivities at 400 K and 500 K compared to silicon magnetic field effect transistors (MagFETs) operating at much lower temperatures. Moreover, device geometrical parameters are optimised to enhance the relative sensitivity from 11.98%T−1 to 23.29%T−1 using the commercial simulation toolbox Atlas, by Silvaco. Journal Article Semiconductor Science and Technology 33 9 095015 0268-1242 1361-6641 31 12 2018 2018-12-31 10.1088/1361-6641/aad58f COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University 2018-12-13T13:35:15.9915505 2018-09-24T09:13:01.1506500 College of Engineering Engineering S Faramehr 1 N Janković 2 P Igić 3 Petar Igic 0000-0001-8150-8815 4
title Analysis of GaN MagHEMTs
spellingShingle Analysis of GaN MagHEMTs
Petar Igic
title_short Analysis of GaN MagHEMTs
title_full Analysis of GaN MagHEMTs
title_fullStr Analysis of GaN MagHEMTs
title_full_unstemmed Analysis of GaN MagHEMTs
title_sort Analysis of GaN MagHEMTs
author_id_str_mv e085acc259a367abc89338346a150186
author_id_fullname_str_mv e085acc259a367abc89338346a150186_***_Petar Igic
author Petar Igic
author2 S Faramehr
N Janković
P Igić
Petar Igic
format Journal article
container_title Semiconductor Science and Technology
container_volume 33
container_issue 9
container_start_page 095015
publishDate 2018
institution Swansea University
issn 0268-1242
1361-6641
doi_str_mv 10.1088/1361-6641/aad58f
college_str College of Engineering
hierarchytype
hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
document_store_str 0
active_str 0
description The simulations, calibration, measured output currents and relative sensitivity of the first-ever fabricated gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) are given in this work. The current imbalance and relative sensitivities obtained from simulations are calibrated against the experimental data measured at room temperature (RT). The average calculated relative sensitivity of the 60 fabricated devices measured is 11.98%T−1. We present three-dimensional simulation results of GaN split-current magnetic sensors for different geometrical and biasing parameters at various ambient temperatures. The detailed analysis of device behaviour is given for each scenario. The relative sensitivity degrades at 400 K (S r = 6.78%T−1) and 500 K (S r = 4.91%T−1) compared to the sensitivity measured at 300 K (S r = 11.98%T−1). The GaN MagHEMTs show promising predicted relative sensitivities at 400 K and 500 K compared to silicon magnetic field effect transistors (MagFETs) operating at much lower temperatures. Moreover, device geometrical parameters are optimised to enhance the relative sensitivity from 11.98%T−1 to 23.29%T−1 using the commercial simulation toolbox Atlas, by Silvaco.
published_date 2018-12-31T03:58:32Z
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score 10.916132