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Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium

Zhaofu Zhang, Yuzheng Guo Orcid Logo, John Robertson

Journal of Applied Physics, Volume: 128, Issue: 21, Start page: 215704

Swansea University Author: Yuzheng Guo Orcid Logo

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DOI (Published version): 10.1063/5.0032897

Abstract

We study the role of the third metal oxide in In–Ga–Zn-type oxides (IGZO), Ga2O3, by comparing the calculated electronic properties of various alternatives (Al, Y, Hf, Ti, Si, and W) with Ga. It is found that Ga2O3 causes little disorder in the conduction band minimum (CBM) energy based on In or Zn...

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Published in: Journal of Applied Physics
ISSN: 0021-8979 1089-7550
Published: AIP Publishing 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa55961
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spelling 2021-02-03T16:40:42.4645201 v2 55961 2021-01-05 Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium 2c285ab01f88f7ecb25a3aacabee52ea 0000-0003-2656-0340 Yuzheng Guo Yuzheng Guo true false 2021-01-05 GENG We study the role of the third metal oxide in In–Ga–Zn-type oxides (IGZO), Ga2O3, by comparing the calculated electronic properties of various alternatives (Al, Y, Hf, Ti, Si, and W) with Ga. It is found that Ga2O3 causes little disorder in the conduction band minimum (CBM) energy based on In or Zn oxides, and it has a large O vacancy suppression effect, which benefits both a high mobility and a low OFF current of IGZO. However, other alternatives give a pronounced conduction band disorder potential due to their higher CBM energies and thus are not ideal components in amorphous oxide semiconductors. Si and W may reduce the negative bias illumination stress instability by lowering hydrogen-induced states to below the bulk valence band maximum, but Si is not beneficial for mobility. Their role in back-end-of-line transistors is also noted. Journal Article Journal of Applied Physics 128 21 215704 AIP Publishing 0021-8979 1089-7550 7 12 2020 2020-12-07 10.1063/5.0032897 COLLEGE NANME General Engineering COLLEGE CODE GENG Swansea University 2021-02-03T16:40:42.4645201 2021-01-05T14:32:22.2578568 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering Zhaofu Zhang 1 Yuzheng Guo 0000-0003-2656-0340 2 John Robertson 3 55961__18977__19fe26710fe8438ab600316681954b92.pdf 55961.pdf 2021-01-05T16:04:06.2506940 Output 1004078 application/pdf Accepted Manuscript true true eng http://creativecommons.org/licenses/by-nc-nd/4.0/
title Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium
spellingShingle Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium
Yuzheng Guo
title_short Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium
title_full Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium
title_fullStr Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium
title_full_unstemmed Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium
title_sort Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium
author_id_str_mv 2c285ab01f88f7ecb25a3aacabee52ea
author_id_fullname_str_mv 2c285ab01f88f7ecb25a3aacabee52ea_***_Yuzheng Guo
author Yuzheng Guo
author2 Zhaofu Zhang
Yuzheng Guo
John Robertson
format Journal article
container_title Journal of Applied Physics
container_volume 128
container_issue 21
container_start_page 215704
publishDate 2020
institution Swansea University
issn 0021-8979
1089-7550
doi_str_mv 10.1063/5.0032897
publisher AIP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering
document_store_str 1
active_str 0
description We study the role of the third metal oxide in In–Ga–Zn-type oxides (IGZO), Ga2O3, by comparing the calculated electronic properties of various alternatives (Al, Y, Hf, Ti, Si, and W) with Ga. It is found that Ga2O3 causes little disorder in the conduction band minimum (CBM) energy based on In or Zn oxides, and it has a large O vacancy suppression effect, which benefits both a high mobility and a low OFF current of IGZO. However, other alternatives give a pronounced conduction band disorder potential due to their higher CBM energies and thus are not ideal components in amorphous oxide semiconductors. Si and W may reduce the negative bias illumination stress instability by lowering hydrogen-induced states to below the bulk valence band maximum, but Si is not beneficial for mobility. Their role in back-end-of-line transistors is also noted.
published_date 2020-12-07T04:10:33Z
_version_ 1763753731056205824
score 11.036706

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