Journal article 99 views 28 downloads
Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration
Yaonan Hou,
Ilias Skandalos,
Mingchu Tang,
Hui Jia,
Huiwen Deng,
Xuezhe Yu,
Yasir Noori,
Spyros Stathopoulos,
Siming Chen,
Huiyun Liu,
Alwyn Seeds,
Graham Reed,
Frederic Gardes
Journal of Luminescence, Volume: 258
Swansea University Author: Yaonan Hou
-
PDF | Version of Record
© 2023 The Author(s). This is an open access article under the CC BY license.
Download (1.47MB)
DOI (Published version): 10.1016/j.jlumin.2023.119799
Abstract
We investigate the surface and interface engineering on InAs quantum dot (QD) emitters, by fabricating and measuring a series of edge-emitting light-emitting diodes. These diodes are encapsulated with non-stoichiometric silicon nitride (SiN) layers with various refractive indices. By analysing the o...
| Published in: | Journal of Luminescence |
|---|---|
| ISSN: | 0022-2313 |
| Published: |
Elsevier BV
2023
|
| Online Access: |
Check full text
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa65279 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Abstract: |
We investigate the surface and interface engineering on InAs quantum dot (QD) emitters, by fabricating and measuring a series of edge-emitting light-emitting diodes. These diodes are encapsulated with non-stoichiometric silicon nitride (SiN) layers with various refractive indices. By analysing the optical and electrical characteristics, it is concluded that Si-rich SiN is an excellent candidate for both electrical and optical passisvations with reduced surface recombination. While the N-rich SiN deposited by the same method shows an improved device performance under optical pumping, the passivation does not appear to be as effective under electrical injection. Our findings provide important information related to the surface engineering of the interface between InAs QD stacks and non-stoichiometric SiN materials, which is arguably one of the crucial steps required to establish monolithic integration of InAs QD emitters with CMOS photonics components. |
|---|---|
| Keywords: |
InAs; Quantum dot; Silicon nitride; Surface passivation; Photonic integration |
| College: |
Faculty of Science and Engineering |
| Funders: |
The authors are grateful for support from the UKRI-EPSRC Programme Grant “QUantum Dot On Silicon systems for communications, information processing and sensing (QUDOS)” under the grant number of EP/T028475/1. For the purpose of open access, the author has applied a Creative Commons Attribution* (CCBY) licence to any Author Accepted Manuscript version arising. |