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Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration

Yaonan Hou, Ilias Skandalos, Mingchu Tang, Hui Jia, Huiwen Deng, Xuezhe Yu, Yasir Noori, Spyros Stathopoulos, Siming Chen, Huiyun Liu, Alwyn Seeds, Graham Reed, Frederic Gardes

Journal of Luminescence, Volume: 258

Swansea University Author: Yaonan Hou

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DOI (Published version): 10.1016/j.jlumin.2023.119799

Abstract

We investigate the surface and interface engineering on InAs quantum dot (QD) emitters, by fabricating and measuring a series of edge-emitting light-emitting diodes. These diodes are encapsulated with non-stoichiometric silicon nitride (SiN) layers with various refractive indices. By analysing the o...

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Published in: Journal of Luminescence
ISSN: 0022-2313
Published: Elsevier BV 2023
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URI: https://cronfa.swan.ac.uk/Record/cronfa65279
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spelling v2 65279 2023-12-14 Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration 113975f710084997abdb26ad5fa03e8e Yaonan Hou Yaonan Hou true false 2023-12-14 EEEG We investigate the surface and interface engineering on InAs quantum dot (QD) emitters, by fabricating and measuring a series of edge-emitting light-emitting diodes. These diodes are encapsulated with non-stoichiometric silicon nitride (SiN) layers with various refractive indices. By analysing the optical and electrical characteristics, it is concluded that Si-rich SiN is an excellent candidate for both electrical and optical passisvations with reduced surface recombination. While the N-rich SiN deposited by the same method shows an improved device performance under optical pumping, the passivation does not appear to be as effective under electrical injection. Our findings provide important information related to the surface engineering of the interface between InAs QD stacks and non-stoichiometric SiN materials, which is arguably one of the crucial steps required to establish monolithic integration of InAs QD emitters with CMOS photonics components. Journal Article Journal of Luminescence 258 Elsevier BV 0022-2313 InAs; Quantum dot; Silicon nitride; Surface passivation; Photonic integration 1 6 2023 2023-06-01 10.1016/j.jlumin.2023.119799 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University Another institution paid the OA fee The authors are grateful for support from the UKRI-EPSRC Programme Grant “QUantum Dot On Silicon systems for communications, information processing and sensing (QUDOS)” under the grant number of EP/T028475/1. For the purpose of open access, the author has applied a Creative Commons Attribution* (CCBY) licence to any Author Accepted Manuscript version arising. 2024-04-10T12:53:35.7730753 2023-12-14T15:40:00.4402501 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Yaonan Hou 1 Ilias Skandalos 2 Mingchu Tang 3 Hui Jia 4 Huiwen Deng 5 Xuezhe Yu 6 Yasir Noori 7 Spyros Stathopoulos 8 Siming Chen 9 Huiyun Liu 10 Alwyn Seeds 11 Graham Reed 12 Frederic Gardes 13 65279__29976__c4e4c088bc4b4845a430428be1b84c1a.pdf 65279.VOR.pdf 2024-04-10T12:51:46.4262189 Output 1543408 application/pdf Version of Record true © 2023 The Author(s). This is an open access article under the CC BY license. true eng http://creativecommons.org/licenses/by/4.0/
title Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration
spellingShingle Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration
Yaonan Hou
title_short Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration
title_full Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration
title_fullStr Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration
title_full_unstemmed Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration
title_sort Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 Yaonan Hou
Ilias Skandalos
Mingchu Tang
Hui Jia
Huiwen Deng
Xuezhe Yu
Yasir Noori
Spyros Stathopoulos
Siming Chen
Huiyun Liu
Alwyn Seeds
Graham Reed
Frederic Gardes
format Journal article
container_title Journal of Luminescence
container_volume 258
publishDate 2023
institution Swansea University
issn 0022-2313
doi_str_mv 10.1016/j.jlumin.2023.119799
publisher Elsevier BV
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description We investigate the surface and interface engineering on InAs quantum dot (QD) emitters, by fabricating and measuring a series of edge-emitting light-emitting diodes. These diodes are encapsulated with non-stoichiometric silicon nitride (SiN) layers with various refractive indices. By analysing the optical and electrical characteristics, it is concluded that Si-rich SiN is an excellent candidate for both electrical and optical passisvations with reduced surface recombination. While the N-rich SiN deposited by the same method shows an improved device performance under optical pumping, the passivation does not appear to be as effective under electrical injection. Our findings provide important information related to the surface engineering of the interface between InAs QD stacks and non-stoichiometric SiN materials, which is arguably one of the crucial steps required to establish monolithic integration of InAs QD emitters with CMOS photonics components.
published_date 2023-06-01T12:53:32Z
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score 11.035655

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