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Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis

B. F. Spiridon, M. Toon, A. Hinz, Saptarsi Ghosh Orcid Logo, S. M. Fairclough, B. J. E. Guilhabert Orcid Logo, M. J. Strain Orcid Logo, I. M. Watson, M. D. Dawson Orcid Logo, D. J. Wallis, R. A. Oliver

Optical Materials Express, Volume: 11, Issue: 6, Start page: 1643

Swansea University Author: Saptarsi Ghosh Orcid Logo

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DOI (Published version): 10.1364/ome.418728

Abstract

GaN-on-Si has become a useful fabrication route for many GaN devices and applications, but the mechanical stress incorporated throughout the material stack can impact the viability of this approach. The transfer printing of GaN membrane devices, a promising emerging technology, is most effective wit...

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Published in: Optical Materials Express
ISSN: 2159-3930
Published: Optica Publishing Group 2021
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URI: https://cronfa.swan.ac.uk/Record/cronfa66875
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last_indexed 2024-11-25T14:19:03Z
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spelling 2024-08-15T14:23:33.4796066 v2 66875 2024-06-23 Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis 3e247ecabd6eddd319264d066b0ce959 0000-0003-1685-6228 Saptarsi Ghosh Saptarsi Ghosh true false 2024-06-23 ACEM GaN-on-Si has become a useful fabrication route for many GaN devices and applications, but the mechanical stress incorporated throughout the material stack can impact the viability of this approach. The transfer printing of GaN membrane devices, a promising emerging technology, is most effective with flat membranes, but in practice many GaN structures released from their Si substrate are highly bowed due to the strain in the epitaxial nitride stack. Our approach uses the optical profiles of epitaxial wafers and membranes as inputs for inferring the mechanical strain state of the material by multi-variable numerical model fitting using COMSOL Multiphysics. This versatile, adaptable and scalable method was tested on samples from two GaN-on-Si wafers, revealing the relationship between built-in strain and material bow in principal-component fashion, returning 3–4×10−4 strain estimates for the AlGaN (compressive) and GaN (tensile) layers, and suggesting the occurrence of plastic deformation during transfer printing. Journal Article Optical Materials Express 11 6 1643 Optica Publishing Group 2159-3930 1 6 2021 2021-06-01 10.1364/ome.418728 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2024-08-15T14:23:33.4796066 2024-06-23T20:02:52.7852708 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering B. F. Spiridon 1 M. Toon 2 A. Hinz 3 Saptarsi Ghosh 0000-0003-1685-6228 4 S. M. Fairclough 5 B. J. E. Guilhabert 0000-0002-3986-8566 6 M. J. Strain 0000-0002-9752-3144 7 I. M. Watson 8 M. D. Dawson 0000-0002-6639-2989 9 D. J. Wallis 10 R. A. Oliver 11 66875__31128__b4b04ac5bdc046d5a0eb3ed352edfcb2.pdf 66875.VoR.pdf 2024-08-15T14:19:54.8943359 Output 3700381 application/pdf Version of Record true © 2021. Released under the terms of the Creative Commons Attribution 4.0 License. true eng https://creativecommons.org/licenses/by/4.0/
title Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis
spellingShingle Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis
Saptarsi Ghosh
title_short Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis
title_full Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis
title_fullStr Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis
title_full_unstemmed Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis
title_sort Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis
author_id_str_mv 3e247ecabd6eddd319264d066b0ce959
author_id_fullname_str_mv 3e247ecabd6eddd319264d066b0ce959_***_Saptarsi Ghosh
author Saptarsi Ghosh
author2 B. F. Spiridon
M. Toon
A. Hinz
Saptarsi Ghosh
S. M. Fairclough
B. J. E. Guilhabert
M. J. Strain
I. M. Watson
M. D. Dawson
D. J. Wallis
R. A. Oliver
format Journal article
container_title Optical Materials Express
container_volume 11
container_issue 6
container_start_page 1643
publishDate 2021
institution Swansea University
issn 2159-3930
doi_str_mv 10.1364/ome.418728
publisher Optica Publishing Group
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
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description GaN-on-Si has become a useful fabrication route for many GaN devices and applications, but the mechanical stress incorporated throughout the material stack can impact the viability of this approach. The transfer printing of GaN membrane devices, a promising emerging technology, is most effective with flat membranes, but in practice many GaN structures released from their Si substrate are highly bowed due to the strain in the epitaxial nitride stack. Our approach uses the optical profiles of epitaxial wafers and membranes as inputs for inferring the mechanical strain state of the material by multi-variable numerical model fitting using COMSOL Multiphysics. This versatile, adaptable and scalable method was tested on samples from two GaN-on-Si wafers, revealing the relationship between built-in strain and material bow in principal-component fashion, returning 3–4×10−4 strain estimates for the AlGaN (compressive) and GaN (tensile) layers, and suggesting the occurrence of plastic deformation during transfer printing.
published_date 2021-06-01T05:30:09Z
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score 11.048756

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