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Co-integration of mesoporous GaN distributed Bragg reflectors and light-emitting diodes by transfer printing

Benoit Guilhabert Orcid Logo, Miles Toon, Saptarsi Ghosh Orcid Logo, Dimitars Jevtics Orcid Logo, Zhongyi Xia, Menno Kappers, Martin D. Dawson Orcid Logo, Rachel A. Oliver, Michael J. Strain Orcid Logo

Optics Letters, Volume: 51, Issue: 4, Start page: 993

Swansea University Author: Saptarsi Ghosh Orcid Logo

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DOI (Published version): 10.1364/ol.584532

Abstract

Transfer printing is employed to demonstrate the integration of gallium nitride (GaN)-based distributed Bragg reflectors (DBR) with 100 μm lateral dimensions and reflectance of 90% in various formats. Mesoporous GaN DBRs are utilized as basic building blocks to fabricate more complex photonic device...

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Published in: Optics Letters
ISSN: 0146-9592 1539-4794
Published: Optica Publishing Group 2026
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URI: https://cronfa.swan.ac.uk/Record/cronfa71577
Abstract: Transfer printing is employed to demonstrate the integration of gallium nitride (GaN)-based distributed Bragg reflectors (DBR) with 100 μm lateral dimensions and reflectance of 90% in various formats. Mesoporous GaN DBRs are utilized as basic building blocks to fabricate more complex photonic devices directly on Silicon (Si) and glass receiving substrates. Multi-mode optical resonant cavities centered at 450 nm on Si are thus formed by direct stacking of two mesoporous DBR membranes. Furthermore, active devices are also demonstrated by combining mesoporous DBR with GaN-based light-emitting diodes membranes of similar dimensions, resulting in a Fabry–Perot-mediated emission with its main peak shifted by 14 nm compared to a reference device without DBR. Measured optical bandwidth of 136 MHz (−6 dB) in a small signal modulation scheme is also demonstrated from these devices.
College: Faculty of Science and Engineering
Funders: TheauthorsacknowledgePorotech,Impington,U.K., for performing the ECE of the GaN samples before TP. Support from the UKRI Engineering and Physical Sciences Research Council, the Royal Academy of Engineering, and the Chairs in Emerging Technologies Scheme, sponsored by DSIT, are acknowledged for financial support.
Issue: 4
Start Page: 993

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