Co-integration of mesoporous GaN distributed Bragg reflectors and light-emitting diodes by transfer printing

Guilhabert, Benoit; Toon, Miles; Ghosh, Saptarsi; Jevtics, Dimitars; Xia, Zhongyi; Kappers, Menno; Dawson, Martin D.; Oliver, Rachel A.; Strain, Michael J.

doi:10.1364/ol.584532

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Co-integration of mesoporous GaN distributed Bragg reflectors and light-emitting diodes by transfer printing

Benoit Guilhabert

, Miles Toon, Saptarsi Ghosh

, Dimitars Jevtics

, Zhongyi Xia, Menno Kappers, Martin D. Dawson

, Rachel A. Oliver, Michael J. Strain

Optics Letters, Volume: 51, Issue: 4, Start page: 993

Swansea University Author: Saptarsi Ghosh

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DOI (Published version): 10.1364/ol.584532

Abstract

Transfer printing is employed to demonstrate the integration of gallium nitride (GaN)-based distributed Bragg reflectors (DBR) with 100 μm lateral dimensions and reflectance of 90% in various formats. Mesoporous GaN DBRs are utilized as basic building blocks to fabricate more complex photonic device...

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Published in:	Optics Letters
ISSN:	0146-9592 1539-4794
Published:	Optica Publishing Group 2026
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa71577

first_indexed	2026-03-07T22:01:15Z
last_indexed	2026-04-11T04:51:55Z
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spelling	2026-04-10T14:08:38.4749985 v2 71577 2026-03-07 Co-integration of mesoporous GaN distributed Bragg reflectors and light-emitting diodes by transfer printing 3e247ecabd6eddd319264d066b0ce959 0000-0003-1685-6228 Saptarsi Ghosh Saptarsi Ghosh true false 2026-03-07 ACEM Transfer printing is employed to demonstrate the integration of gallium nitride (GaN)-based distributed Bragg reflectors (DBR) with 100 μm lateral dimensions and reflectance of 90% in various formats. Mesoporous GaN DBRs are utilized as basic building blocks to fabricate more complex photonic devices directly on Silicon (Si) and glass receiving substrates. Multi-mode optical resonant cavities centered at 450 nm on Si are thus formed by direct stacking of two mesoporous DBR membranes. Furthermore, active devices are also demonstrated by combining mesoporous DBR with GaN-based light-emitting diodes membranes of similar dimensions, resulting in a Fabry–Perot-mediated emission with its main peak shifted by 14 nm compared to a reference device without DBR. Measured optical bandwidth of 136 MHz (−6 dB) in a small signal modulation scheme is also demonstrated from these devices. Journal Article Optics Letters 51 4 993 Optica Publishing Group 0146-9592 1539-4794 9 2 2026 2026-02-09 10.1364/ol.584532 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee TheauthorsacknowledgePorotech,Impington,U.K., for performing the ECE of the GaN samples before TP. Support from the UKRI Engineering and Physical Sciences Research Council, the Royal Academy of Engineering, and the Chairs in Emerging Technologies Scheme, sponsored by DSIT, are acknowledged for financial support. 2026-04-10T14:08:38.4749985 2026-03-07T16:09:01.9779314 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Benoit Guilhabert 0000-0002-3986-8566 1 Miles Toon 2 Saptarsi Ghosh 0000-0003-1685-6228 3 Dimitars Jevtics 0000-0002-6678-8334 4 Zhongyi Xia 5 Menno Kappers 6 Martin D. Dawson 0000-0002-6639-2989 7 Rachel A. Oliver 8 Michael J. Strain 0000-0002-9752-3144 9 71577__36493__2013ce17d3a24317989ffe8c191ffe10.pdf 71577.VoR.pdf 2026-04-10T14:06:17.3305297 Output 3608172 application/pdf Version of Record true Published by Optica Publishing Group under the terms of the Creative Commons Attribution 4.0 License. true eng https://creativecommons.org/licenses/by/4.0/
title	Co-integration of mesoporous GaN distributed Bragg reflectors and light-emitting diodes by transfer printing
spellingShingle	Co-integration of mesoporous GaN distributed Bragg reflectors and light-emitting diodes by transfer printing Saptarsi Ghosh
title_short	Co-integration of mesoporous GaN distributed Bragg reflectors and light-emitting diodes by transfer printing
title_full	Co-integration of mesoporous GaN distributed Bragg reflectors and light-emitting diodes by transfer printing
title_fullStr	Co-integration of mesoporous GaN distributed Bragg reflectors and light-emitting diodes by transfer printing
title_full_unstemmed	Co-integration of mesoporous GaN distributed Bragg reflectors and light-emitting diodes by transfer printing
title_sort	Co-integration of mesoporous GaN distributed Bragg reflectors and light-emitting diodes by transfer printing
author_id_str_mv	3e247ecabd6eddd319264d066b0ce959
author_id_fullname_str_mv	3e247ecabd6eddd319264d066b0ce959_***_Saptarsi Ghosh
author	Saptarsi Ghosh
author2	Benoit Guilhabert Miles Toon Saptarsi Ghosh Dimitars Jevtics Zhongyi Xia Menno Kappers Martin D. Dawson Rachel A. Oliver Michael J. Strain
format	Journal article
container_title	Optics Letters
container_volume	51
container_issue	4
container_start_page	993
publishDate	2026
institution	Swansea University
issn	0146-9592 1539-4794
doi_str_mv	10.1364/ol.584532
publisher	Optica Publishing Group
college_str	Faculty of Science and Engineering
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description	Transfer printing is employed to demonstrate the integration of gallium nitride (GaN)-based distributed Bragg reflectors (DBR) with 100 μm lateral dimensions and reflectance of 90% in various formats. Mesoporous GaN DBRs are utilized as basic building blocks to fabricate more complex photonic devices directly on Silicon (Si) and glass receiving substrates. Multi-mode optical resonant cavities centered at 450 nm on Si are thus formed by direct stacking of two mesoporous DBR membranes. Furthermore, active devices are also demonstrated by combining mesoporous DBR with GaN-based light-emitting diodes membranes of similar dimensions, resulting in a Fabry–Perot-mediated emission with its main peak shifted by 14 nm compared to a reference device without DBR. Measured optical bandwidth of 136 MHz (−6 dB) in a small signal modulation scheme is also demonstrated from these devices.
published_date	2026-02-09T05:51:55Z
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Co-integration of mesoporous GaN distributed Bragg reflectors and light-emitting diodes by transfer printing

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