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Conference Paper/Proceeding/Abstract 1339 views

Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs

Manuel Aldegunde, Antonio J Garcia-Loureiro, Natalia Seoane, Asen Asenov, Karol Kalna Orcid Logo

CDE 2009. Spanish Conference on Electron Devices, 11-13 Feb. 2009, Pages: 211 - 214

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/SCED.2009.4800468

Published in: CDE 2009. Spanish Conference on Electron Devices, 11-13 Feb. 2009
Published: 2009
URI: https://cronfa.swan.ac.uk/Record/cronfa9159
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spelling 2013-06-07T10:14:12.5401137 v2 9159 2013-09-03 Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 ACEM Conference Paper/Proceeding/Abstract CDE 2009. Spanish Conference on Electron Devices, 11-13 Feb. 2009 211 214 31 12 2009 2009-12-31 10.1109/SCED.2009.4800468 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2013-06-07T10:14:12.5401137 2013-09-03T06:36:29.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Manuel Aldegunde 1 Antonio J Garcia-Loureiro 2 Natalia Seoane 3 Asen Asenov 4 Karol Kalna 0000-0002-6333-9189 5
title Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
spellingShingle Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
Karol Kalna
title_short Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
title_full Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
title_fullStr Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
title_full_unstemmed Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
title_sort Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Manuel Aldegunde
Antonio J Garcia-Loureiro
Natalia Seoane
Asen Asenov
Karol Kalna
format Conference Paper/Proceeding/Abstract
container_title CDE 2009. Spanish Conference on Electron Devices, 11-13 Feb. 2009
container_start_page 211
publishDate 2009
institution Swansea University
doi_str_mv 10.1109/SCED.2009.4800468
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2009-12-31T03:26:38Z
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score 11.099862

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