A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs

Seoane, Natalia; Nagy, Daniel; Indalecio, Guillermo; Espiñeira, Gabriel; Kalna, Karol; García-Loureiro, Antonio

doi:10.3390/ma12152391

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A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs

Natalia Seoane, Daniel Nagy, Guillermo Indalecio, Gabriel Espiñeira, Karol Kalna

, Antonio García-Loureiro

Materials, Volume: 12, Issue: 15, Start page: 2391

Swansea University Author: Karol Kalna

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DOI (Published version): 10.3390/ma12152391

Abstract

An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate capabilities of the toolbox, a 10 nm gate length Si gate-all-around field-effec...

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Published in:	Materials
ISSN:	1996-1944
Published:	2019
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa51467

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last_indexed	2019-08-27T15:30:37Z
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spelling	2019-08-27T12:38:12.4980898 v2 51467 2019-08-19 A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2019-08-19 ACEM An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate capabilities of the toolbox, a 10 nm gate length Si gate-all-around field-effect transistor is selected as a benchmark device. The device exhibits an off-current ( IOFF ) of 0.03 μ A/ μ m, and an on-current ( ION ) of 1770 μ A/ μ m, with the ION/IOFF ratio 6.63×104 , a value 27% larger than that of a 10.7 nm gate length Si FinFET. The device SS is 71 mV/dec, no far from the ideal limit of 60 mV/dec. The threshold voltage standard deviation due to statistical combination of four sources of variability (line- and gate-edge roughness, metal grain granularity, and random dopants) is 55.5 mV, a value noticeably larger than that of the equivalent FinFET (30 mV). Finally, using a fluctuation sensitivity map, we establish which regions of the device are the most sensitive to the line-edge roughness and the metal grain granularity variability effects. The on-current of the device is strongly affected by any line-edge roughness taking place near the source-gate junction or by metal grains localised between the middle of the gate and the proximity of the gate-source junction. Journal Article Materials 12 15 2391 1996-1944 nanowire field-effect transistors; variability effects; Monte Carlo; Schrödinger based quantum corrections; drift-diffusion 31 12 2019 2019-12-31 10.3390/ma12152391 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2019-08-27T12:38:12.4980898 2019-08-19T10:12:45.6161618 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Natalia Seoane 1 Daniel Nagy 2 Guillermo Indalecio 3 Gabriel Espiñeira 4 Karol Kalna 0000-0002-6333-9189 5 Antonio García-Loureiro 6 0051467-19082019101502.pdf seoane2019(4).pdf 2019-08-19T10:15:02.9470000 Output 2245503 application/pdf Version of Record true 2019-08-19T00:00:00.0000000 Distributed under the terms of a Creative Commons Attribution (CC-BY-4.0) true eng
title	A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs
spellingShingle	A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs Karol Kalna
title_short	A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs
title_full	A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs
title_fullStr	A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs
title_full_unstemmed	A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs
title_sort	A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs
author_id_str_mv	1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv	1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author	Karol Kalna
author2	Natalia Seoane Daniel Nagy Guillermo Indalecio Gabriel Espiñeira Karol Kalna Antonio García-Loureiro
format	Journal article
container_title	Materials
container_volume	12
container_issue	15
container_start_page	2391
publishDate	2019
institution	Swansea University
issn	1996-1944
doi_str_mv	10.3390/ma12152391
college_str	Faculty of Science and Engineering
hierarchytype
hierarchy_top_id	facultyofscienceandengineering
hierarchy_top_title	Faculty of Science and Engineering
hierarchy_parent_id	facultyofscienceandengineering
hierarchy_parent_title	Faculty of Science and Engineering
department_str	School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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description	An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate capabilities of the toolbox, a 10 nm gate length Si gate-all-around field-effect transistor is selected as a benchmark device. The device exhibits an off-current ( IOFF ) of 0.03 μ A/ μ m, and an on-current ( ION ) of 1770 μ A/ μ m, with the ION/IOFF ratio 6.63×104 , a value 27% larger than that of a 10.7 nm gate length Si FinFET. The device SS is 71 mV/dec, no far from the ideal limit of 60 mV/dec. The threshold voltage standard deviation due to statistical combination of four sources of variability (line- and gate-edge roughness, metal grain granularity, and random dopants) is 55.5 mV, a value noticeably larger than that of the equivalent FinFET (30 mV). Finally, using a fluctuation sensitivity map, we establish which regions of the device are the most sensitive to the line-edge roughness and the metal grain granularity variability effects. The on-current of the device is strongly affected by any line-edge roughness taking place near the source-gate junction or by metal grains localised between the middle of the gate and the proximity of the gate-source junction.
published_date	2019-12-31T04:40:18Z
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score	11.089572

A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs

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