Journal article 1019 views
Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'
IEEE Electron Device Letters, Volume: 29, Issue: 10, Start page: 1085
Swansea University Author:
Karol Kalna
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1109/LED.2008.2002752
Abstract
Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'
Published in: | IEEE Electron Device Letters |
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ISSN: | 0741-3106 |
Published: |
2008
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Online Access: |
Check full text
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URI: | https://cronfa.swan.ac.uk/Record/cronfa6072 |
College: |
Faculty of Science and Engineering |
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Issue: |
10 |
Start Page: |
1085 |