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Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'

Iain G Thayne, Richard J. W Hill, David A. J Moran, Karol Kalna Orcid Logo, Asen Asenov, Matthias Passlack

IEEE Electron Device Letters, Volume: 29, Issue: 10, Start page: 1085

Swansea University Author: Karol Kalna Orcid Logo

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Published in: IEEE Electron Device Letters
ISSN: 0741-3106
Published: 2008
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College: Faculty of Science and Engineering
Issue: 10
Start Page: 1085