Journal article 907 views
Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'
IEEE Electron Device Letters, Volume: 29, Issue: 10, Start page: 1085
Swansea University Author: Karol Kalna
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DOI (Published version): 10.1109/LED.2008.2002752
Abstract
Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'
Published in: | IEEE Electron Device Letters |
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ISSN: | 0741-3106 |
Published: |
2008
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URI: | https://cronfa.swan.ac.uk/Record/cronfa6072 |
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2013-06-27T22:46:56.2887879 v2 6072 2013-09-03 Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm' 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Journal Article IEEE Electron Device Letters 29 10 1085 0741-3106 31 12 2008 2008-12-31 10.1109/LED.2008.2002752 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-06-27T22:46:56.2887879 2013-09-03T06:36:31.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Iain G Thayne 1 Richard J. W Hill 2 David A. J Moran 3 Karol Kalna 0000-0002-6333-9189 4 Asen Asenov 5 Matthias Passlack 6 |
title |
Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm' |
spellingShingle |
Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm' Karol Kalna |
title_short |
Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm' |
title_full |
Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm' |
title_fullStr |
Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm' |
title_full_unstemmed |
Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm' |
title_sort |
Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm' |
author_id_str_mv |
1329a42020e44fdd13de2f20d5143253 |
author_id_fullname_str_mv |
1329a42020e44fdd13de2f20d5143253_***_Karol Kalna |
author |
Karol Kalna |
author2 |
Iain G Thayne Richard J. W Hill David A. J Moran Karol Kalna Asen Asenov Matthias Passlack |
format |
Journal article |
container_title |
IEEE Electron Device Letters |
container_volume |
29 |
container_issue |
10 |
container_start_page |
1085 |
publishDate |
2008 |
institution |
Swansea University |
issn |
0741-3106 |
doi_str_mv |
10.1109/LED.2008.2002752 |
college_str |
Faculty of Science and Engineering |
hierarchytype |
|
hierarchy_top_id |
facultyofscienceandengineering |
hierarchy_top_title |
Faculty of Science and Engineering |
hierarchy_parent_id |
facultyofscienceandengineering |
hierarchy_parent_title |
Faculty of Science and Engineering |
department_str |
School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
document_store_str |
0 |
active_str |
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published_date |
2008-12-31T03:07:28Z |
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1763749761405419520 |
score |
11.016235 |