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Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'

Iain G Thayne, Richard J. W Hill, David A. J Moran, Karol Kalna Orcid Logo, Asen Asenov, Matthias Passlack

IEEE Electron Device Letters, Volume: 29, Issue: 10, Start page: 1085

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/LED.2008.2002752

Published in: IEEE Electron Device Letters
ISSN: 0741-3106
Published: 2008
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URI: https://cronfa.swan.ac.uk/Record/cronfa6072
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first_indexed 2013-07-23T11:56:07Z
last_indexed 2018-02-09T04:33:13Z
id cronfa6072
recordtype SURis
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spelling 2013-06-27T22:46:56.2887879 v2 6072 2013-09-03 Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm' 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Journal Article IEEE Electron Device Letters 29 10 1085 0741-3106 31 12 2008 2008-12-31 10.1109/LED.2008.2002752 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-06-27T22:46:56.2887879 2013-09-03T06:36:31.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Iain G Thayne 1 Richard J. W Hill 2 David A. J Moran 3 Karol Kalna 0000-0002-6333-9189 4 Asen Asenov 5 Matthias Passlack 6
title Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'
spellingShingle Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'
Karol Kalna
title_short Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'
title_full Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'
title_fullStr Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'
title_full_unstemmed Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'
title_sort Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Iain G Thayne
Richard J. W Hill
David A. J Moran
Karol Kalna
Asen Asenov
Matthias Passlack
format Journal article
container_title IEEE Electron Device Letters
container_volume 29
container_issue 10
container_start_page 1085
publishDate 2008
institution Swansea University
issn 0741-3106
doi_str_mv 10.1109/LED.2008.2002752
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2008-12-31T03:07:28Z
_version_ 1763749761405419520
score 10.997593

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