Journal article 863 views
Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'
Iain G Thayne,
Richard J. W Hill,
David A. J Moran,
Karol Kalna 
,
Asen Asenov,
Matthias Passlack
,
Asen Asenov,
Matthias Passlack
IEEE Electron Device Letters, Volume: 29, Issue: 10, Start page: 1085
Swansea University Author:
Karol Kalna
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1109/LED.2008.2002752
Abstract
Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'
| Published in: | IEEE Electron Device Letters |
|---|---|
| ISSN: | 0741-3106 |
| Published: |
2008
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa6072 |
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| College: |
Faculty of Science and Engineering |
|---|---|
| Issue: |
10 |
| Start Page: |
1085 |