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Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography

Thomas I. Wallow, Christoph K. Hohle, Andreas Frommhold, Alexandra McClelland, Dongxu Yang, Richard Palmer Orcid Logo, John Roth, Yasin Ekinci, Mark C. Rosamund, Alex P. G. Robinson

Swansea University Author: Richard Palmer Orcid Logo

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DOI (Published version): 10.1117/12.2085672

Published: 2015
URI: https://cronfa.swan.ac.uk/Record/cronfa49254
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spelling 2019-03-18T14:29:32.6479320 v2 49254 2019-03-18 Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography 6ae369618efc7424d9774377536ea519 0000-0001-8728-8083 Richard Palmer Richard Palmer true false 2019-03-18 ACEM Book chapter 31 12 2015 2015-12-31 10.1117/12.2085672 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2019-03-18T14:29:32.6479320 2019-03-18T14:29:32.4488225 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Mechanical Engineering Thomas I. Wallow 1 Christoph K. Hohle 2 Andreas Frommhold 3 Alexandra McClelland 4 Dongxu Yang 5 Richard Palmer 0000-0001-8728-8083 6 John Roth 7 Yasin Ekinci 8 Mark C. Rosamund 9 Alex P. G. Robinson 10
title Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography
spellingShingle Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography
Richard Palmer
title_short Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography
title_full Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography
title_fullStr Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography
title_full_unstemmed Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography
title_sort Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography
author_id_str_mv 6ae369618efc7424d9774377536ea519
author_id_fullname_str_mv 6ae369618efc7424d9774377536ea519_***_Richard Palmer
author Richard Palmer
author2 Thomas I. Wallow
Christoph K. Hohle
Andreas Frommhold
Alexandra McClelland
Dongxu Yang
Richard Palmer
John Roth
Yasin Ekinci
Mark C. Rosamund
Alex P. G. Robinson
format Book chapter
publishDate 2015
institution Swansea University
doi_str_mv 10.1117/12.2085672
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Mechanical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Mechanical Engineering
document_store_str 0
active_str 0
published_date 2015-12-31T13:48:53Z
_version_ 1822138337371095040
score 11.2797985

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